	US 7,465,408 B1
	Solutions for controlled, selective etching of copper
Steven C. Avanzino, Cupertino, Calif. (US)
Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US)
Filed on Dec. 03, 2003, as Appl. No. 10/726,992.
Int. Cl. B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); C23F 3/00 (2006.01)

U.S. Cl. 216—100 [216/46; 252/79.1; 438/750; 438/751]

20 Claims

1. A method of etching a copper containing material, comprising:

contacting the copper containing material comprising at least about 10% by weight copper with a first solution to convert at least a portion of the copper containing material to a passivating film, the first solution comprising a peroxide compound, a first organic acid, and water and having a pH from about 2 to about 6; and

contacting the passivating film with a second solution to remove the passivating film, the second solution comprising a second organic acid and water.