| US 7,463,663 B2 | ||
| Semiconductor laser diode and integrated semiconductor optical waveguide device | ||
| Toshihiko Fukamachi, Kokubunji (Japan); Shigeki Makino, Kokubunji (Japan); Takafumi Taniguchi, Tokyo (Japan); and Masahiro Aoki, Kokubunji (Japan) | ||
| Assigned to Opnext Japan, Inc., Kanagawa (Japan) | ||
| Filed on Feb. 07, 2007, as Appl. No. 11/703,159. | ||
| Claims priority of application No. 2006-044887 (JP), filed on Feb. 22, 2006. | ||
| Prior Publication US 2007/0195847 A1, Aug. 23, 2007 | ||
| Int. Cl. H01S 5/00 (2006.01) | ||
| U.S. Cl. 372—46.01 [372/43.01; 372/54] | 5 Claims |
| 1. A semiconductor laser diode having a semiconductor substrate, a lower clad layer provided on the substrate, an active layer
provided on the lower clad layer, an upper clad layer provided on the active layer, and a ridge provided on the upper clad
layer, the semiconductor laser diode comprising:
an upper buffer layer formed between the upper clad layer and the ridge, and
grooves formed along both sides of the ridge into the buffer layer,
wherein the width of the grooves is from more than 0 to 200 nm and the angle of the side face of the groove with respect to
the substrate surface is 90 degrees ±10 degrees at the central part of the depth.
|