| US 7,463,539 B2 | ||
| Method for burst mode, bit line charge transfer and memory using the same | ||
| Yung Feng Lin, Dasi Township (Taiwan) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Jan. 02, 2007, as Appl. No. 11/619,062. | ||
| Prior Publication US 2008/0159032 A1, Jul. 03, 2008 | ||
| Int. Cl. G11C 7/00 (2006.01) | ||
| U.S. Cl. 365—203 [365/185.25; 365/189.15; 365/204; 365/233.17; 365/233.18] | 8 Claims |
| 1. A method for operating memory device for a read operation, the memory device including an array of memory cells with bit
lines selectively connectable to sense amplifiers, the method comprising:
pre-charging a first set of selected bit lines to a pre-charge voltage and coupling the first set of selected bit lines to
a set of sense amplifiers;
sensing data from cells coupled to the first set of selected bit lines;
transferring charge from the first set of selected bit lines to corresponding members of a second set of bit lines in response
to address signals;
discharging charged bit lines other than the second set of bit lines in response to said address signals;
after said transferring charge and said discharging, pre-charging the second set of bit lines to the pre-charge voltage and
coupling the second set of selected bit lines to said set of sense amplifiers in response to said address signals; and
sensing data from cells coupled to the second set of bit lines.
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