US 7,463,512 B2
Memory element with reduced-current phase change element
Hsiang-Lan Lung, Elmsford, N.Y. (US)
Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan)
Filed on Jun. 28, 2007, as Appl. No. 11/769,961.
Claims priority of provisional application 60/921494, filed on Apr. 02, 2007.
Claims priority of provisional application 60/888869, filed on Feb. 08, 2007.
Prior Publication US 2008/0192534 A1, Aug. 14, 2008
Int. Cl. G11C 11/00 (2006.01)
U.S. Cl. 365—163 21 Claims
OG exemplary drawing
 
1. A memory device, comprising: an electrode element; a phase change layer, formed from a memory material having at least two solid phases, positioned in electrical contact with the electrode element; and a top electrode element, making electrical contact with the phase change layer at a location remote from the contact location of the electrical contact between the phase change layer and the electrode element, thereby defining a current flow path through the phase change layer wherein at least a portion thereof lies in a path transverse to the current flow path within the electrode element, further comprising a block element having a perimeter, formed of an insulating material, lying on the opposite side of the phase change layer from the electrode element, and having a lateral extent in the direction of the phase change layer greater than that of the electrode element.