| US 7,462,527 B2 | ||
| Method of forming nitride films with high compressive stress for improved PFET device performance | ||
| Richard A. Conti, Katonah, N.Y. (US); Ronald P. Bourque, Wappingers Falls, N.Y. (US); Nancy R. Klymko, Hopewell Junction, N.Y. (US); Anita Madan, Danbury, Conn. (US); Michael C. Smits, Poughkeepsie, N.Y. (US); Roy H. Tilghman, Stormville, N.Y. (US); Kwong Hon Wong, Wappingers Falls, N.Y. (US); and Daewon Yang, Hopewell Junction, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US); and Novellus Systems, Inc., San Jose, Calif. (US) | ||
| Filed on Jul. 06, 2005, as Appl. No. 11/160,705. | ||
| Prior Publication US 2007/0007548 A1, Jan. 11, 2007 | ||
| Int. Cl. H01L 21/8238 (2006.01) | ||
| U.S. Cl. 438—199 [438/792] | 16 Claims |
| 1. A method of making a FET device, comprising the steps of:
forming a PFET gate structure on a substrate;
depositing a nitride layer on the substrate, the nitride layer overlying the PFET gate structure; and
providing a final structure of the FET device with the nitride layer covering at least top and sidewalls of the PFET gate
structure,
wherein said depositing is performed using a high-density plasma (HDP) process so that the nitride layer has a compressive
stress with a magnitude greater than about 2.8 GPa.
|