| US 7,461,472 B2 | ||
| Half-tone phase shift mask and patterning method using thereof | ||
| Jun-Cheng Lai, Hsinchu (Taiwan) | ||
| Assigned to Powerchip Semiconductor Corp., Hsinchu (Taiwan) | ||
| Filed on Jun. 16, 2003, as Appl. No. 10/250,228. | ||
| Prior Publication US 2004/0253522 A1, Dec. 16, 2004 | ||
| Int. Cl. G03F 1/00 (2006.01); G03C 5/00 (2006.01) | ||
| U.S. Cl. 40—5 [430/322] | 9 Claims |
| 1. A method of using a half-tone phase shift mask to form a strip pattern having two thicker ends and a narrower mid section,
comprising the steps of:
providing a substrate; forming a material layer over the substrate; forming a photoresist layer on flee material layer;
patterning the photoresist layer using the half-tone phase shift mask, wherein the half-tone phase shift mask comprises: a
mask substrate; two sheltering layers formed as first strips on the mask substrate with a space therebetween; a half-tone
phase shift layer formed as a second strip and disposed at least in the space between the first strips, wherein the second
strip is thinner than the first strips; and
patterning the material layer using the patterned photoresist layer as an etching mask to form the strip.
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