US 11,837,680 B2
Substrate structuring methods
Han-Wen Chen, Cupertino, CA (US); Steven Verhaverbeke, San Francisco, CA (US); and Giback Park, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 18, 2022, as Appl. No. 17/747,408.
Application 17/747,408 is a continuation of application No. 17/227,763, filed on Apr. 12, 2021, granted, now 11,362,235.
Application 17/227,763 is a continuation of application No. 16/687,564, filed on Nov. 18, 2019, granted, now 11,063,169, issued on Jul. 13, 2021.
Claims priority of application No. 102019000006740 (IT), filed on May 10, 2019.
Prior Publication US 2022/0278248 A1, Sep. 1, 2022
Int. Cl. H01L 31/18 (2006.01); H01L 21/027 (2006.01); H01L 21/304 (2006.01); H01L 21/768 (2006.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 21/683 (2006.01)
CPC H01L 31/1804 (2013.01) [H01L 21/0275 (2013.01); H01L 21/3046 (2013.01); H01L 21/3086 (2013.01); H01L 21/30621 (2013.01); H01L 21/486 (2013.01); H01L 21/6835 (2013.01); H01L 21/76898 (2013.01); H01L 23/49827 (2013.01); H01L 31/1892 (2013.01); H01L 2221/68345 (2013.01); Y02E 10/547 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for substrate structuring, comprising:
bonding a silicon substrate to a carrier plate via an adhesive, the substrate having a thickness between 110 μm and 300 μm, the adhesive comprising at least one of a water-soluble adhesive layer, a solvent-soluble adhesive layer, a thermal release adhesive layer, or a UV release adhesive layer;
chucking the carrier plate and the silicon substrate on a support stand;
patterning the substrate to form one or more cavities and one or more vias therein, the one or more cavities and the one or more vias having different morphologies; and
exposing the substrate to an etch process to remove debris from the one or more cavities and the one or more vias, the etch process further smoothening one or more surfaces of the substrate.