US 7,460,343 B2
Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
Matthew Joseph Carey, San Jose, Calif. (US); Jeffrey Robinson Childress, San Jose, Calif. (US); Eric Edward Fullerton, Morgan Hill, Calif. (US); and Stefan Maat, San Jose, Calif. (US)
Assigned to Hitachi Global Storage Technologies Netherlands B.V., Amsterdam (Netherlands)
Filed on Mar. 31, 2005, as Appl. No. 11/97,638.
Prior Publication US 2006/0221513 A1, Oct. 05, 2006
This patent is subject to a terminal disclaimer.
Int. Cl. G11B 5/39 (2006.01)
U.S. Cl. 360—324.12  [360/324.2] 31 Claims
OG exemplary drawing
 
1. A magnetoresistive sensor comprising:
an underlayer;
a hard magnetic layer formed over the underlayer;
a non-magnetic coupling layer formed over the hard magnetic layer; and
a magnetic free layer formed over the coupling layer;
wherein the underlayer has an anisotropic roughness at an surface between the hard magnetic layer and the underlayer.