| US 7,460,209 B2 | ||
| Advanced mask patterning with patterning layer | ||
| Jian Ma, San Jose, Calif. (US); Phil Freiberger, Santa Clara, Calif. (US); Karmen Yung, Sunnyvale, Calif. (US); Frederick Chen, Cupertino, Calif. (US); Chaoyang Li, San Jose, Calif. (US); and Steve Mak, Pleasanton, Calif. (US) | ||
| Assigned to Intel Corporation, Santa Clara, Calif. (US) | ||
| Filed on Mar. 28, 2005, as Appl. No. 11/92,993. | ||
| Prior Publication US 2006/0215135 A1, Sep. 28, 2006 | ||
| Int. Cl. G03B 27/42 (2006.01); G03F 1/00 (2006.01) | ||
| U.S. Cl. 355—53 [430/5] | 9 Claims |
| 1. A lithography system comprising:
a source of imaging light including light of an imaging wavelength;
an imaging structure positioned to receive the imaging light; and
a substrate positioner configured to position a substrate to receive light from the imaging structure, and wherein the imaging
structure comprises:
an imaging substrate substantially transparent to light of the imaging wavelength;
an imaging layer on the imaging substrate, the imaging layer configured to substantially block light of the imaging wavelength;
and
a patterning layer on the imaging layer, wherein the patterning layer has a substantially different set of etch properties
than the imaging layer, wherein the patterning layer has a thickness in the range from two nanometers to twenty five nanometers
and wherein the material for the patterning layer is selected from the group consisting of silicon and silicon nitride.
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