| US 7,459,759 B2 | ||
| Magnetic random access memory | ||
| Yoshiaki Fukuzumi, Yokohama (Japan); and Toshihiko Nagase, Sagamihara (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jun. 06, 2006, as Appl. No. 11/447,131. | ||
| Claims priority of application No. 2005-166917 (JP), filed on Jun. 07, 2005. | ||
| Prior Publication US 2006/0274568 A1, Dec. 07, 2006 | ||
| Int. Cl. G11C 11/02 (2006.01) | ||
| U.S. Cl. 257—427 [257/421; 257/2; 257/3; 257/4; 257/5; 360/324.1; 365/149; 438/3; 438/133] | 7 Claims |
| 1. A magnetic random access memory comprising:
a conductive line which extends in a first direction;
a soft magnetic material which surrounds the conductive line;
a gap disposed in a part of the soft magnetic material;
a magnetic free layer having a first portion and a second portion, and provided in a plane which is parallel to the first
direction and a second direction crossing the first direction, the first portion being located in the gap, the second portion
being located outside the gap;
a magnetic pinned layer; and
a tunnel barrier layer which is provided between the second portion of the magnetic free layer and the magnetic pinned layer.
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