| US 7,459,717 B2 | ||
| Phase change memory cell and manufacturing method | ||
| Hsiang Lan Lung, Elmsford, N.Y. (US) | ||
| Assigned to Macronix International Co., Ltd., Hsinchu (Taiwan) | ||
| Filed on Jun. 14, 2006, as Appl. No. 11/424,177. | ||
| Claims priority of provisional application 60/740176, filed on Nov. 28, 2005. | ||
| Prior Publication US 2007/0121363 A1, May 31, 2007 | ||
| Int. Cl. H01L 47/00 (2006.01) | ||
| U.S. Cl. 257—4 [257/2; 257/5; 257/379; 257/529; 257/537; 365/148; 365/163] | 15 Claims |
| 1. A phase change memory cell, the memory cell being a part of a phase change memory device, comprising:
first and second electrodes having generally coplanar surfaces spaced apart by a gap;
a phase change bridge electrically coupling the first and second electrodes;
at least a section of the phase change bridge comprising a higher transition temperature bridge portion and a lower transition
temperature portion; and
the lower transition temperature portion comprising a phase change region which can be transitioned, by the passage of electrical
current therethrough, from generally crystalline to generally amorphous states at a lower temperature than the higher transition
temperature portion.
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