| US 7,459,391 B2 | ||
| Semiconductor device and method of fabricating the same | ||
| Takahiko Yoshizawa, Yokohama (Japan); Noriaki Matsunaga, Chigasaki (Japan); and Naofumi Nakamura, Tokyo (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Aug. 22, 2005, as Appl. No. 11/208,000. | ||
| Claims priority of application No. 2004-318375 (JP), filed on Nov. 01, 2004. | ||
| Prior Publication US 2006/0091401 A1, May 04, 2006 | ||
| Int. Cl. H01L 21/4763 (2006.01) | ||
| U.S. Cl. 438—638 [438/637; 438/672; 438/673; 257/775; 257/E21.241; 257/E21.256] | 6 Claims |
| 1. A semiconductor device fabrication method comprising:
forming an interlayer dielectric film containing carbon above a semiconductor substrate;
forming a protective film on a portion of the interlayer dielectric film, which is close to a surface and in which a carbon
concentration is low;
forming a trench by selectively removing a desired region of the interlayer dielectric film and protective film, such that
the region extends from a surface of the protective film to a bottom surface of the interlayer dielectric film;
supplying a gas which includes a carbon element to the trench;
supplying carbon to an interface between the interlayer dielectric film and protective film; and
forming a conductive layer by burying a conductive material in the trench.
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