preparing a silicon substrate;

depositing a layer of SiGe on the silicon substrate;

depositing a layer of insulator on the SiGe layer;

implanting hydrogen ions into the silicon substrate through the SiGe layer in a relaxation hydrogen implantation step;

annealing the silicon substrate and SiGe layer in a first annealing step to relax the SiGe layer; thereby forming a relaxed SiGe layer;

smoothing the relaxed SiGe layer;

depositing a layer of silicon on the relaxed SiGe layer;

implanting hydrogen ions in a splitting hydrogen implantation step to facilitate splitting of the wafer;

preparing a glass substrate;

bonding the glass substrate to the strained silicon layer to form a composite wafer;

splitting the composite wafer to provide a split wafer having, in seriatim, a glass substrate, a layer of strained silicon; a layer of relaxed SiGe; and silicon layer split from the silicon substrate;

dry etching the split wafer to remove the silicon layer split from the silicon substrate and a portion of the relaxed SiGe layer;

annealing the split wafer to increase the bond between the strained silicon and the glass substrate in a second annealing step;

selectively etching the split wafer to remove any remaining SiGe, thereby forming a strained silicon-on-glass wafer;

depositing a dielectric on the silicon side of the silicon-on-glass wafer;

preparing a plastic substrate;

applying adhesive and bonding the plastic to the silicon side of the silicon-on-glass wafer;

removing the glass from the glass side of the bonded, silicon-on-glass wafer to form a silicon-on-plastic wafer; and

completing a desired IC device on the silicon-on-glass wafer.