| US 7,459,246 B2 | ||
| Method for manufacturing a semiconductor device, stencil mask and method for manufacturing a the same | ||
| Kyoichi Suguro, Yokohama (Japan); Takeshi Shibata, Kwasaki (Japan); Kazuyoshi Sugihara, Miura-gun (Japan); and Kouji Matsuo, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Jan. 03, 2007, as Appl. No. 11/648,564. | ||
| Application 11/648564 is a division of application No. 10/886656, filed on Jul. 09, 2004, granted, now 7,179,569, filed on Feb. 20, 2007. | ||
| Application 10/886656 is a division of application No. 09/984475, filed on Oct. 30, 2001, granted, now 6,770,402, filed on Aug. 03, 2004. | ||
| Claims priority of application No. 2000-333914 (JP), filed on Oct. 31, 2000; and application No. 2001-290118 (JP), filed on Sep. 21, 2001. | ||
| Prior Publication US 2007/0111114 A1, May 17, 2007 | ||
| Int. Cl. G03F 9/00 (2006.01) | ||
| U.S. Cl. 430—5 | 8 Claims |
| 1. A stencil mask comprising:
a silicon semiconductor thin film in which a plurality of openings are formed; and
a plurality of covering layers formed on a surface of the silicon semiconductor thin film and an inner surface of the openings,
wherein the plurality of covering layers include an insulating film containing a silicon, and the insulating film is harder
than the silicon semiconductor thin film.
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