| US 7,458,051 B2 | ||
| ECO cell for reducing leakage power | ||
| Yung-Chin Hou, Taipei (Taiwan); Lee-Chung Lu, Taipei (Taiwan); Chu-Ping Wang, Hsinchu (Taiwan); and Li-Chun Tien, Tainan (Taiwan) | ||
| Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (Taiwan) | ||
| Filed on Nov. 17, 2005, as Appl. No. 11/281,035. | ||
| Prior Publication US 2007/0109832 A1, May 17, 2007 | ||
| Int. Cl. G06F 17/50 (2006.01) | ||
| U.S. Cl. 716—9 [716/10; 716/11; 716/12] | 12 Claims |
| 1. A semiconductor structure comprising:
a first conductive line for connecting to a power supply;
a second conductive line for connecting to a complementary power supply; and
at least one spare cell including one or more doped regions, the doped regions being coupled together by via contacts and
conductive patterns so that the spare cell carries out certain predetermined functions,
wherein the spare cell is unconnected from the first or second conductive line for being selectively connected to at least
one normally functioning electronic component, the first conductive line and the second conductive line only during a rerouting
process of the semiconductor structure for reducing leakage power,
wherein the spare cell comprises one or more gate structures overlying the doped regions,
wherein one or more active areas coupled between the doped regions and the first and second conductive lines for connecting
the spare cell to the power supply and the complementary power supply via the first and second conductive lines during the
rerouting process of the semiconductor structure.
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