US 7,456,889 B2
Solid-state imaging device with gate contacts overlapping both an isolation region and an active region
Ikuko Inoue, Yokohama (Japan); and Hiroshige Goto, Yokohama (Japan)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan)
Filed on Oct. 18, 2005, as Appl. No. 11/251,825.
Claims priority of application No. 2004-304484 (JP), filed on Oct. 19, 2004.
Prior Publication US 2006/0082668 A1, Apr. 20, 2006
Int. Cl. H04N 3/14 (2006.01); H04N 5/335 (2006.01); H01L 27/00 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01)
U.S. Cl. 348—308  [250/208.1; 257/291] 20 Claims
OG exemplary drawing
 
1. A MOS type solid-state imaging device comprising an imaging region in which a plurality of unit cells, each of which includes a photoelectric conversion section and a signal scanning circuit section, are disposed on a semiconductor substrate in a two-dimensional manner, the each unit cell having an active region in which the photoelectric conversion section and the signal scanning circuit section are formed and an element isolating region formed adjacent to the active region, the signal scanning circuit section being composed of a plurality of MOS transistors,
wherein the plurality of MOS transistors of the signal scanning circuit section include at least a MOS transistor having a gate contact which overlaps both of the element isolating region and the active region adjacent thereto.