| US 7,456,488 B2 | ||
| Porogen material | ||
| Chongying Xu, New Milford, Conn. (US); Alexander S. Borovik, Hartford, Conn. (US); and Thomas H. Baum, New Fairfield, Conn. (US) | ||
| Assigned to Advanced Technology Materials, Inc., Danbury, Conn. (US) | ||
| Filed on Nov. 21, 2002, as Appl. No. 10/301,109. | ||
| Prior Publication US 2004/0102006 A1, May 27, 2004 | ||
| Int. Cl. H01L 29/12 (2006.01); H01L 31/0256 (2006.01) | ||
| U.S. Cl. 257—613 [257/E29.139] | 11 Claims |
| 1. A porogen material comprising:
a silicon containing porogen and
a silicon based dielectric precursor,
wherein said silicon containing porogen and said silicon based dielectric precursor are chemically bonded to one another.
|