US 7,456,456 B2
Semiconductor device and method of manufacturing the same
Hiroshi Itokawa, Yokohama (Japan); Koji Yamakawa, Tokyo (Japan); and Rainer Bruchhaus, Munich (Germany)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan); and Infineon Technologies AG, Munich (Germany)
Filed on Dec. 27, 2006, as Appl. No. 11/616,680.
Application 11/616680 is a continuation of application No. 10/882203, filed on Jul. 02, 2004, abandoned.
Prior Publication US 2007/0111334 A1, May 17, 2007
Int. Cl. H01L 29/94 (2006.01)
U.S. Cl. 257—295  [257/306; 257/310; 257/E27.104] 4 Claims
OG exemplary drawing
 
1. A semiconductor device comprising: a semiconductor substrate; and a capacitor including a lower electrode disposed above the semiconductor substrate, a dielectric film disposed above the lower electrode, and an upper electrode disposed above the dielectric film; the upper electrode including metal oxide formed of ABO3 perovskite oxide and containing at least an Ru element and a Ti element as B site elements.