	US 7,456,140 B2
	Compositions for cleaning organic and plasma etched residues for semiconductor devices
Robert J. Small, Dublin, Calif. (US); Bakul P. Patel, Pleasanton, Calif. (US); Wai Mun Lee, Fremont, Calif. (US); Douglas Holmes, San Ramon, Calif. (US); Jerome Daviot, Antony (France); and Chris Reid, Glasgow (United Kingdom)
Assigned to EKC Technology, Inc., Hayward, Calif. (US)
Filed on Aug. 17, 2004, as Appl. No. 10/920,494.
Application 10/920494 is a continuation in part of application No. 09/903064, filed on Jul. 10, 2001, granted, now 6,777,380.
Claims priority of provisional application 60/217650, filed on Jul. 10, 2000.
Prior Publication US 2005/0202987 A1, Sep. 15, 2005
This patent is subject to a terminal disclaimer.
Int. Cl. C11D 7/50 (2006.01)

U.S. Cl. 510—175 [510/176; 134/1.3]

7 Claims

1. A method of removing a photoresist coating from a substrate comprising contacting the coating with an aqueous composition comprising

from about 0.5 percent by weight to about 3.5 percent by weight of ammonium bifluoride;

from about 15 percent by weight to about 70 percent by weight of an organic sulfoxide solvent selected from the group consisting of dimethyl sulfoxide, dipropyl sulfoxide, diethyl sulfoxide, methylethyl sulfoxide, diphenyl sulfoxide, methylphenyl sulfoxide, 1,1′-dihydroxyphenyl sulfoxide and mixtures thereof;

optionally a sulfone solvent corresponding to the following:

where R₁and R₂are alkyl and R₃-R₁₀are independently H or alkyl; and

from 0 to about 5 percent by weight of an alkanolamine;

wherein:

the composition contains at least one of the alkanolamine and the sulfone solvent; when the sulfone solvent is present, it is present in an amount from about 30 percent by weight to about 50 percent by weight and the sulfone and the sulfoxide solvents are present in a combined amount of at least 55 percent by weight; and

when the sulfone solvent is not present, the sulfoxide solvent is present in an amount of at least about 55 percent by weight.