| US 7,456,116 B2 | ||
| Gap-fill depositions in the formation of silicon containing dielectric materials | ||
| Nitin K. Ingle, Santa Clara, Calif. (US); Shan Wong, San Jose, Calif. (US); Xinyun Xia, Sunnyvale, Calif. (US); Vikash Banthia, Mountain View, Calif. (US); Won B. Bang, Gilroy, Calif. (US); Yen-Kun V. Wang, Fremont, Calif. (US); and Zheng Yuan, Fremont, Calif. (US) | ||
| Assigned to Applied Materials, Inc., Santa Clara, Calif. (US) | ||
| Filed on Dec. 20, 2004, as Appl. No. 11/18,381. | ||
| Application 11/018381 is a continuation in part of application No. 10/247672, filed on Sep. 19, 2002, granted, now 6,905,940. | ||
| Claims priority of provisional application 60/605116, filed on Aug. 27, 2004. | ||
| Prior Publication US 2005/0142895 A1, Jun. 30, 2005 | ||
| Int. Cl. H01L 21/31 (2006.01) | ||
| U.S. Cl. 438—787 [438/788; 438/789; 438/790; 257/E21.273; 257/E21.279] | 16 Claims |
| 1. A method to form a silicon oxide layer, the method comprising:
providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, wherein the silicon-containing
precursor is selected from the group consisting of OMTS;
providing a flow of an oxidizing precursor comprising ozone to the chamber;
causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer; and
increasing over time a ratio of the silicon-containing precursor: oxidizing precursor flowed into the chamber, by increasing
a flow rate of the silicon-containing precursor relative to a flow rate of the oxidizing precursor to alter a rate of deposition
of the silicon oxide on the substrate.
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