| US 7,456,110 B2 | ||
| Method and apparatus for controlling etch selectivity | ||
| Jeremy S. Lansford, Austin, Tex. (US); and Laura Faulk, Austin, Tex. (US) | ||
| Assigned to Advanced Micro Devices, Inc., Austin, Tex. (US) | ||
| Filed on Nov. 23, 2004, as Appl. No. 10/996,034. | ||
| Application 10/996034 is a continuation of application No. 09/783423, filed on Feb. 14, 2001, abandoned. | ||
| Prior Publication US 2005/0098535 A1, May 12, 2005 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—706 [438/714; 216/72] | 21 Claims |
| 1. A method for controlling an etch process, comprising:
providing a wafer having at least a first layer and a second layer formed over the first layer;
measuring a thickness of the second layer;
providing a first operating recipe of an etch tool having a first etch selectivity;
prior to etching the second layer, modifying the first operating recipe to generate a modified operating recipe having a second
etch selectivity different than the first etch selectivity using an etch selectivity model that incorporates the measured
thickness of the second layer to control the etch selectivity of the modified operating recipe; and
etching at least the second layer based on the modified operating recipe.
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