| US 7,456,107 B2 | ||
| Compositions and methods for CMP of low-k-dielectric materials | ||
| Jason Keleher, Aurora, Ill. (US); Daniel Woodland, Oswego, Ill. (US); Francesco De Rege Thesauro, Naperville, Ill. (US); Robert Medsker, Yorkville, Ill. (US); and Jason Aggio, Bolingbrook, Ill. (US) | ||
| Assigned to Cabot Microelectronics Corporation, Aurora, Ill. (US) | ||
| Filed on Nov. 09, 2006, as Appl. No. 11/595,536. | ||
| Prior Publication US 2008/0111101 A1, May 15, 2008 | ||
| Int. Cl. H01L 21/302 (2006.01) | ||
| U.S. Cl. 438—692 [438/689; 438/693; 252/79.1; 252/79.2; 252/79.3; 252/79.4] | 19 Claims |
| 1. A chemical-mechanical polishing (CMP) composition for polishing a low-k dielectric material, the composition comprising:
(a) a particulate abrasive material;
(b) at least one silicone-free nonionic surfactant comprising a hydrophilic portion and a lipophilic portion, wherein the
hydrophilic portion comprises a polyol;
(c) at least one silicone-containing nonionic surfactant comprising a hydrophilic portion and a lipophilic portion; and
(d) an aqueous carrier therefor.
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