US 7,456,101 B1
	Method for enhancing the nucleation and morphology of ruthenium films on dielectric substrates using amine containing compounds
Sanjay Gopinath, Fremont, Calif. (US); Jeremie Dalton, San Jose, Calif. (US); Jason M. Blackburn, Santa Clara, Calif. (US); John Drewery, Alameda, Calif. (US); and Willibrordus Gerardus Maria van den Hoek, Saratoga, Calif. (US)
Assigned to Novellus Systems, Inc., San Jose, Calif. (US)
Filed on Mar. 13, 2007, as Appl. No. 11/724,091.
Application 11/724091 is a division of application No. 10/868384, filed on Jun. 14, 2004, granted, now 7,211,509.
Int. Cl. H01L 21/4763 (2006.01)

U.S. Cl. 438—650  [438/681; 438/686]

13 Claims

1. A method of depositing a layer of a metal nitride on a dielectric surface, the method comprising: (a) exposing the dielectric substrate to an metal-amine complex; (b) purging the reaction chamber of substantially all of the residual metal amine complex; (c) exposing the dielectric surface to ammonia; (d) purging the reaction chamber of substantially all of the residual ammonia; wherein (a)-(d) form a metal nitride layer on the surface; and further comprising, after depositing the layer of metal nitride on the surface, (e) exposing the substrate to a ruthenium precursor and an optional co-reactant to form a ruthenium layer on the substrate; whereby ruthenium nucleation on the surface is facilitated by the metal-nitride layer.