| US 7,456,083 B2 | ||
| Semiconductor device and manufacturing method of the same | ||
| Takashi Noma, Ota (Japan); Yoshinori Seki, Gunma (Japan); and Motoaki Wakui, Kumagaya (Japan) | ||
| Assigned to Sanyo Electric Co., Ltd., Osaka (Japan); and Kanto Sanyo Semiconductor Co., Ltd., Gunma (Japan) | ||
| Filed on Mar. 02, 2005, as Appl. No. 11/69,061. | ||
| Claims priority of application No. 2004-062323 (JP), filed on Mar. 05, 2004. | ||
| Prior Publication US 2005/0208735 A1, Sep. 22, 2005 | ||
| Int. Cl. H01L 21/301 (2006.01) | ||
| U.S. Cl. 438—460 [438/401; 438/16; 257/797] | 13 Claims |
| 1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor wafer comprising a resin layer disposed on a front surface of the semiconductor wafer, a first electrode
pad and a second electrode pad that are formed on the front surface, and a supporting member attached to the front surface
by the resin layer, the semiconductor wafer comprising a plurality of semiconductor die regions;
forming on a back surface of the semiconductor wafer a first alignment mark and a second alignment mark so that the first
alignment mark is disposed in a first semiconductor die region and the second alignment mark is disposed in a second semiconductor
die region that is next to the first semiconductor die region;
detecting positions of the first and second alignment marks;
calculating a middle position between the positions of the first and second alignment marks;
aligning a blade with the calculated middle position on a side of the semiconductor wafer corresponding to the back surface;
and
cutting using the aligned blade at the calculated middle position the resin layer disposed on the front surface between the
first and second electrode pads and along a predetermined direction.
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