| US 7,456,057 B2 | ||
| Germanium on glass and glass-ceramic structures | ||
| Kishor Purushottam Gadkaree, Big Flats, N.Y. (US); Paul Stephen Danielson, Corning, N.Y. (US); Matthew John Dejneka, Corning, N.Y. (US); Josef Chauncey Lapp, Corning, N.Y. (US); and Linda Ruth Pinckney, Corning, N.Y. (US) | ||
| Assigned to Corning Incorporated, Corning, N.Y. (US) | ||
| Filed on May 01, 2006, as Appl. No. 11/415,732. | ||
| Claims priority of provisional application 60/755934, filed on Dec. 31, 2005. | ||
| Prior Publication US 2007/0166947 A1, Jul. 19, 2007 | ||
| Int. Cl. H01L 21/338 (2006.01) | ||
| U.S. Cl. 438—179 [438/178] | 20 Claims |
| 1. A semiconductor-on-insulator structure comprising first and second layers which are attached to one another either directly or through one or more intermediate layers, wherein the first layer comprises a substantially single crystal semiconductor material comprising germanium; the second layer comprises a glass or a glass-ceramic having a linear coefficient thermal of expansion (25-300° C.) which is about 61×10−7/° C. and within the range of +/−20×10−7/° C. of the linear coefficient thermal of expansion of the germanium first layer. |