| US 7,456,051 B2 | ||
| Photoelectric device grinding process and device grinding process | ||
| Kuo-Chung Yee, Taipei (Taiwan); and Chih-Lung Chen, Kaohsiung (Taiwan) | ||
| Assigned to Advanced Semiconductor Engineering, Inc., Kaohsiung (Taiwan) | ||
| Filed on Jul. 29, 2004, as Appl. No. 10/710,696. | ||
| Claims priority of application No. 93114874 A (TW), filed on May 26, 2004. | ||
| Prior Publication US 2005/0266601 A1, Dec. 01, 2005 | ||
| Int. Cl. H01L 21/30 (2006.01) | ||
| U.S. Cl. 438—118 [438/456; 257/E21.237; 257/E21.484] | 9 Claims |
| 1. A photoelectric device grinding process, comprising the steps of:
providing a wafer having a plurality of chip units thereon, wherein the surface of each chip unit has at least a photoelectric
device;
providing an amount of glue with a plurality of spacers therein;
attaching a dielectric substrate over the photoelectric device on the surface of the wafer through the glue, wherein the glue
and the spacers are disposed between the dielectric substrate and the wafer and both of the glue and the spacers are directly
contacted with the dielectric substrate and the wafer, such that the spacers maintain a constant gap between the dielectric
substrate and the wafer and the spacers are surrounded by the glue except for the portion of the spacers directly contacting
the dielectric substrate and wafer; and
after attaching the dielectric substrate over the photoelectric device on the surface of the wafer, grinding the surface of
the dielectric substrate away from the wafer or the surface of the wafer away from the dielectric substrate.
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