| US 7,455,951 B2 | ||
| Information recording medium and its manufacturing method | ||
| Katsutaro Ichihara, Yokohama (Japan); Sumio Ashida, Edogawa-ku (Japan); Keiichiro Yusu, Yokohama (Japan); Toshihiko Nagase, Shibuya-ku (Japan); and Naomasa Nakamura, Yokohama (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Kawasaki-shi (Japan) | ||
| Filed on Mar. 27, 2006, as Appl. No. 11/389,347. | ||
| Application 11/389347 is a continuation of application No. 10/359616, filed on Feb. 07, 2003, abandoned. | ||
| Application 10/359616 is a continuation of application No. 09/340011, filed on Jun. 28, 1999, granted, now 6,554,972. | ||
| Claims priority of application No. 1998-181156 (JP), filed on Jun. 26, 1998; and application No. 1999-88010 (JP), filed on Mar. 30, 1999. | ||
| Prior Publication US 2006/0177769 A1, Aug. 10, 2006 | ||
| Int. Cl. G11B 7/24 (2006.01) | ||
| U.S. Cl. 430—270.13 [430/945; 369/284; 428/64.4; 428/64.5] | 2 Claims |

| 1. A phase change recording medium comprising:
a substrate;
a first recording layer disposed on the substrate is in the as-deposited states with areas of recording marks formed by as-deposited
recording and crystalline areas which have undergone erasure and configured to undergo a reversible phase change between written
amorphous and crystalline states due to light irradiation and thereby change an optical characteristic,
wherein said first recording layer includes in the amorphous state and in an as-deposited state an amorphous medium without
crystalline order and has dispersed therein a plurality of fine nuclei having an average size of 0.5 nm to 4 nm, and
wherein said first recording layer in an irradiation area exposed to an erasing light beam is in the crystalline state and
has a crystal part including a plurality of first crystal grains surrounded by second crystal grains that result from growing
the plurality of fine nuclei and having a size of 20 to 100 nm, the first crystal grains being relatively larger than the
second crystal grains, the second crystal grains having a size of 4 to 20 nm, and the first crystal grains being evenly distributed
throughout said erased areas of said first recording layer among the second crystal grains.
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