| US 7,301,801 B2 | ||
| Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers | ||
| David W. Abraham, Croton-on-Hudson, N.Y. (US); and Daniel Christopher Worledge, Cortlandt Manor, N.Y. (US) | ||
| Assigned to International Business Machines Corporation, Armonk, N.Y. (US) | ||
| Filed on Oct. 28, 2005, as Appl. No. 11/260,907. | ||
| Prior Publication US 2007/0097731 A1, May 03, 2007 | ||
| Int. Cl. G11C 11/00 (2006.01) | ||
| U.S. Cl. 365—158 [365/171; 257/420] | 21 Claims |
| 1. A semiconductor device comprising:
a free layer, the free layer comprising a plurality of free magnetic sublayers;
a pinned layer, the pinned layer comprising a plurality of pinned magnetic sublayers, each of the pinned magnetic sublayers
exerting a magnetic field on the free magnetic sublayers; and
a barrier layer formed between the free layer and the pinned layer;
wherein dimensions of each of the pinned magnetic sublayers are selected to substantially equalize average magnetic fields
acting on each of the free magnetic sublayers.
|