| US 7,301,274 B2 | ||
| Organic light emitting diode display with insulating film which contains SiO | ||
| Jun Tanaka, Kawasaki (Japan); Kiyoshi Ogata, Tokyo (Japan); Masaya Adachi, Hitachi (Japan); and Miharu Otani, Yokohama (Japan) | ||
| Assigned to Hitachi Displays, Ltd., Chiba-ken (Japan) | ||
| Filed on Jul. 26, 2004, as Appl. No. 10/898,593. | ||
| Claims priority of application No. 2004-010565 (JP), filed on Jan. 19, 2004. | ||
| Prior Publication US 2005/0156520 A1, Jul. 21, 2005 | ||
| Int. Cl. H05B 33/00 (2006.01) | ||
| U.S. Cl. 313—504 [313/512] | 23 Claims |
| 1. An active matrix type organic light emitting diode display with thin film transistors formed therein, wherein a porous insulating film which is porous with nano pores in said film and contains SiO is formed between a transparent electrode contacting with an organic electroluminescence layer and a surface from which emission from said organic electroluminescence layer is coupled out to the outside, and said porous insulating film has a film density not lower than 0.6 g/cm3 and lower than 1.8 g/cm3 and a film refractive index lower than that of said transparent electrode. |