| US 7,454,051 B2 | ||
| Method of manufacturing photo mask, mask pattern shape evaluation apparatus, method of judging photo mask defect corrected portion, photo mask defect corrected portion judgment apparatus, and method of manufacturing a semiconductor device | ||
| Takashi Hirano, Kawasaki (Japan); and Eiji Yamanaka, Tokyo (Japan) | ||
| Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan) | ||
| Filed on Apr. 21, 2005, as Appl. No. 11/110,915. | ||
| Claims priority of application No. 2004-126795 (JP), filed on Apr. 22, 2004. | ||
| Prior Publication US 2005/0238221 A1, Oct. 27, 2005 | ||
| Int. Cl. G06K 9/00 (2006.01) | ||
| U.S. Cl. 382—144 [382/145; 716/19; 716/21; 438/16] | 13 Claims |
| 1. A method of manufacturing a photo mask, comprising:
detecting a defect of a pattern formed on the photo mask;
acquiring a pattern image of a first region on the photo mask including the defect;
extracting a pattern contour from the acquired pattern image to acquire pattern contour extracted data;
producing first graphic data based on the pattern contour extracted data and a pixel size on the photo mask;
acquiring pattern data including the first region and corresponding to a second region from design data of the photo mask;
producing second graphic data from the acquired pattern data;
replacing the second graphic data with the first graphic data to produce third graphic data only in a region where the first
graphic data is superimposed upon the second graphic data;
producing transfer patterns of pattern shapes represented by the second and third graphic data; and
comparing the transfer patterns to judge whether or not the defect needs to be corrected.
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