| US 7,453,117 B2 | ||
| Non-volatile semiconductor memory device | ||
| Naoaki Sudo, Kanagawa (Japan); and Kohji Kanamori, Kanagawa (Japan) | ||
| Assigned to NEC Electronics Corporation, Kawasaki, Kanagawa (Japan) | ||
| Filed on Jun. 16, 2006, as Appl. No. 11/453,796. | ||
| Claims priority of application No. 2005-181851 (JP), filed on Jun. 22, 2005. | ||
| Prior Publication US 2006/0289922 A1, Dec. 28, 2006 | ||
| Int. Cl. H01L 29/76 (2006.01) | ||
| U.S. Cl. 257—314 [257/315; 257/316; 257/317; 257/E29.129; 257/E29.03; 257/E21.422; 257/E21.068] | 15 Claims |
| 1. A non-volatile semiconductor memory device comprising:
at least two unit cells, wherein each unit cell comprises:
a memory node provided in a second region adjacent to said first region;
a diffusion region provided in a third region adjacent to said second region and on the surface of said substrate;
control gate provided on the top of said memory node; and
a sense amplifier, wherein said two corresponding ones of said unit cells are selectively connected to two input ends of said
sense amplifier,
wherein each data bit being stored uses two of corresponding ones of said unit cells.
|