US 7,453,099 B2
Semiconductor light emitting device
Yuko Kato, Fujisawa (Japan); Hidefumi Yasuda, Kawasaki (Japan); and Kazuyoshi Furukawa, Kawasaki (Japan)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (Japan)
Filed on Oct. 04, 2006, as Appl. No. 11/538,646.
Claims priority of application No. 2005-292608 (JP), filed on Oct. 05, 2005.
Prior Publication US 2007/0114550 A1, May 24, 2007
Int. Cl. H01L 33/00 (2006.01)
U.S. Cl. 257—98  [257/99] 10 Claims
OG exemplary drawing
 
1. A semiconductor light emitting device, comprising:
a transparent layer having a first main surface and a second main surface at a side opposite to the first main surface; a plurality of light emitting sections arranged in at least one line on the first main surface of the transparent layer, each of the plurality of light emitting sections having an active layer and a tapered section, the tapered section reflecting light emitted from the active layer to the direction of the transparent layer, each of the plurality of light emitting sections having a central portion and a peripheral portion and having light intensity distribution on a second main surface of the transparent layer, on the second main surface of the transparent layer, light intensity at a region opposite to the peripheral portion being equal to or more than light intensity at a region opposite to the central portion; and
a plurality of contact sections arranged opposite to the central portion on the second main surface of the transparent layer, each of the plurality of contact sections being opaque with respect to emission wavelengths of the plurality of light emitting sections.