	US 7,453,096 B2
	Method of fabricating a semiconductor light-emitting device
Takashi Takahashi, Miyagi (Japan); Morimasa Kaminishi, Miyagi (Japan); Shunichi Sato, Miyagi (Japan); Akihiro Itoh, Miyagi (Japan); and Naoto Jikutani, Kanagawa (Japan)
Assigned to Ricoh Company, Ltd., Tokyo (Japan)
Filed on Apr. 17, 2006, as Appl. No. 11/404,876.
Application 11/404876 is a division of application No. 10/878282, filed on Jun. 29, 2004, granted, now 7,067,846, filed on Jun. 27, 2006.
Application 10/878282 is a division of application No. 10/105800, filed on Mar. 26, 2002, granted, now 6,765,232, filed on Jul. 20, 2004.
Claims priority of application No. 2001-089068 (JP), filed on Mar. 27, 2001; application No. 2001-210462 (JP), filed on Jul. 11, 2001; application No. 2001-252537 (JP), filed on Aug. 23, 2001; application No. 2001-253382 (JP), filed on Aug. 23, 2001; application No. 2001-262902 (JP), filed on Aug. 31, 2001; application No. 2001-288367 (JP), filed on Sep. 21, 2001; application No. 2001-292958 (JP), filed on Sep. 26, 2001; application No. 2001-293353 (JP), filed on Sep. 26, 2001; application No. 2001-297936 (JP), filed on Sep. 27, 2001; application No. 2001-297937 (JP), filed on Sep. 27, 2001; application No. 2001-297938 (JP), filed on Sep. 27, 2001; application No. 2001-297939 (JP), filed on Sep. 27, 2001; application No. 2001-390927 (JP), filed on Dec. 25, 2001; application No. 2002-029822 (JP), filed on Feb. 06, 2002; and application No. 2002-065431 (JP), filed on Mar. 11, 2002.
Prior Publication US 2006/0261352 A1, Nov. 23, 2006
Int. Cl. H01L 27/15 (2006.01)

U.S. Cl. 257—87 [257/101; 257/102; 257/103; 257/E33.025; 438/46]

6 Claims

1. A method of fabricating a semiconductor light-emitting device, said semiconductor light-emitting device having a semiconductor layer containing Al between a substrate and an active layer of a nitrogen-containing III-V mixed crystal, said method comprising the steps of:

heating a susceptor in a growth chamber;

growing said semiconductor layer in said growth chamber while using a metal organic source of Al; and

growing said active layer in said growth chamber while using a nitrogen compound source,

wherein there is provided a step, after said step of growing said semiconductor layer containing Al but before a start of said step of growing said active layer, of removing residual Al species comprising one or more of an Al source, an Al reactant, an Al compound, and Al, remaining in said growth chamber, from a part of said growth chamber that can make a contact with said nitrogen compound source or an impurity contained in said nitrogen compound source, wherein said residual Al species is removed to an outside of said growth chamber.