| US 7,453,065 B2 | ||
| Sensor and image pickup device | ||
| Keishi Saito, Tokyo (Japan); Hideo Hosono, Yokohama (Japan); Toshio Kamiya, Yokohama (Japan); and Kenji Nomura, Yokohama (Japan) | ||
| Assigned to Canon Kabushiki Kaisha, Tokyo (Japan); and Tokyo Institute of Technology, Tokyo (Japan) | ||
| Filed on Nov. 09, 2005, as Appl. No. 11/269,648. | ||
| Claims priority of application No. 2004-326681 (JP), filed on Nov. 10, 2004. | ||
| Prior Publication US 2006/0108529 A1, May 25, 2006 | ||
| Int. Cl. G01J 5/20 (2006.01) | ||
| U.S. Cl. 250—338.4 [438/104] | 1 Claim |
| 1. An image pickup device comprising:
a flexible substrate;
an X-ray sensor comprises a semiconductor layer, and the semiconductor layer comprises an amporphous oxide, arranged on the
flexible substrate; and
a field effect transistor for reading a signal from the X-ray sensor, wherein:
the field effect transistor has an amorphous oxide as an active layer; and
the amorphous oxide comprises one of an oxide having an electron carrier concentration of less than 1018/cm3 and an oxide whose electron mobility tends to increase with increasing electron carrier concentration.
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