US 7,452,829 B2
	Plasma CVD method
Shunpei Yamazaki, Kanagawa-Ken (Japan); Masaaki Hiroki, Kanagawa-Ken (Japan); and Mitsunori Sakama, Kanagawa-Ken (Japan)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken (Japan)
Filed on Jun. 29, 2006, as Appl. No. 11/427,377.
Application 11/427377 is a division of application No. 10/911710, filed on Aug. 05, 2004, granted, now 7,071,128.
Application 10/911710 is a division of application No. 09/917095, filed on Jul. 26, 2001, granted, now 6,951,828, filed on Oct. 04, 2005.
Application 09/457128 is a division of application No. 08/748233, filed on Nov. 12, 1996, granted, now 6,015,762.
Application 09/917095 is a continuation of application No. 09/457128, filed on Dec. 07, 1999, granted, now 6,281,147, filed on Aug. 28, 2001.
Claims priority of application No. 7-317524 (JP), filed on Nov. 10, 1995.
Prior Publication US 2006/0258062 A1, Nov. 16, 2006
Int. Cl. H01L 21/469 (2006.01); H01L 27/01 (2006.01)

U.S. Cl. 438—788  [257/348]

7 Claims

1. A plasma CVD method characterized in that an output of an RF power supply is gradually or continuously increased to a value which is at the time of forming a film so that a rapid and transitional change in voltage between RF electrodes is suppressed.