| US 7,452,794 B2 | ||
| Manufacturing method of a thin film semiconductor device | ||
| Shunpei Yamazaki, Setagaya (Japan); Hisashi Ohtani, Atsugi (Japan); Hiroyuki Shimada, Atsugi (Japan); Mitsunori Sakama, Atsugi (Japan); Hisashi Abe, Atsugi (Japan); and Satoshi Teramoto, Atsugi (Japan) | ||
| Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (Japan) | ||
| Filed on Mar. 26, 2007, as Appl. No. 11/727,257. | ||
| Application 11/727257 is a division of application No. 10/164019, filed on Jun. 07, 2002, granted, now 7,271,082. | ||
| Application 10/164019 is a division of application No. 08/685788, filed on Jul. 24, 1996, granted, now 6,482,752. | ||
| Application 08/685788 is a continuation of application No. 08/321321, filed on Oct. 11, 1994, abandoned. | ||
| Claims priority of application No. 5-291268 (JP), filed on Oct. 26, 1993; application No. 5-347645 (JP), filed on Dec. 24, 1993; and application No. 5-347646 (JP), filed on Dec. 24, 1993. | ||
| Prior Publication US 2007/0173046 A1, Jul. 26, 2007 | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—584 [438/149; 438/152; 438/479; 257/E29.117] | 72 Claims |
| 1. A method of manufacturing a semiconductor device comprising:
forming a first insulating film over a substrate in a multi-chamber apparatus having a plurality of film formation chambers;
forming a second insulating film over the first insulating film in the multi-chamber apparatus;
forming a semiconductor film comprising amorphous silicon over the second insulating film in the multi-chamber apparatus;
taking the substrate out of the multi-chamber apparatus after the formation of the semiconductor film;
crystallizing the semiconductor film outside the multi-chamber apparatus; and
forming a gate insulating film over the semiconductor film,
wherein each of the first insulating film, the second insulating film and the semiconductor film is formed by CVD, and
wherein the first insulating film, the second insulating film and the semiconductor film are successively formed without taking
the substrate out of the multi-chamber apparatus.
|