| US 7,452,760 B2 | ||
| Thin film transistors and semiconductor constructions | ||
| Gurtej S. Sandhu, Boise, Id. (US); Shubneesh Batra, Boise, Id. (US); and Pierre C. Fazan, Boise, Id. (US) | ||
| Assigned to Micron Technology, Inc., Boise, Id. (US) | ||
| Filed on Dec. 21, 2006, as Appl. No. 11/644,863. | ||
| Application 11/644863 is a division of application No. 11/021651, filed on Dec. 22, 2004, granted, now 7,385,222. | ||
| Application 09/902277 is a division of application No. 09/837645, filed on Apr. 17, 2001, granted, now 6,344,376, filed on Feb. 05, 2002. | ||
| Application 11/021651 is a continuation of application No. 09/902277, filed on Jul. 09, 2001, granted, now 6,890,842. | ||
| Application 09/837645 is a continuation of application No. 09/457206, filed on Dec. 07, 1999, granted, now 6,238,957, filed on May 29, 2001. | ||
| Application 09/457206 is a continuation of application No. 08/872789, filed on Jun. 10, 1997, granted, now 6,001,675, filed on Dec. 14, 1999. | ||
| Application 08/872789 is a continuation of application No. 08/594127, filed on Jan. 31, 1996, granted, now 5,665,611, filed on Sep. 09, 1997. | ||
| Prior Publication US 2007/0102705 A1, May 10, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—151 [438/149; 438/158] | 6 Claims |
| 1. A semiconductor construction comprising a passivated polycrystalline material layer, the passivated polycrystalline material
being formed by a method comprising:
providing a layer of polycrystalline material over a substrate, the polycrystalline material having grain boundaries;
forming a fluorine-comprising layer proximate the layer of polycrystalline material;
transferring fluorine into the grain boundaries from the fluorine comprising layer to form the passivated polycrystalline
material layer, the passivated polycrystalline material layer having fewer dangling bonds than would occur had the fluorine
present in the passivated layer been provided by implanting; and
removing the entire fluorine-comprising layer.
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