| US 7,452,742 B2 | ||
| Solid-state imaging device, camera and method of producing the solid-state imaging device | ||
| Hideo Kanbe, Kanagawa (Japan) | ||
| Assigned to Sony Corporation, Tokyo (Japan) | ||
| Filed on Jun. 29, 2005, as Appl. No. 11/169,592. | ||
| Claims priority of application No. P2004-193278 (JP), filed on Jun. 30, 2004. | ||
| Prior Publication US 2006/0006488 A1, Jan. 12, 2006 | ||
| Int. Cl. H01L 21/00 (2006.01) | ||
| U.S. Cl. 438—57 [438/58; 438/143; 438/471; 257/E23.137; 257/E27.133] | 8 Claims |
| 1. A method of producing a solid-state imaging device comprising the steps of:
forming a structure including (a) a substrate having a gettering layer thereon and having a first impurity with a first concentration,
(b) a first conductive type epitaxial layer and (c) a first conductive type impurity layer stacked on one another in that
order,
said first conductive type epitaxial layer being formed on the substrate including the gettering layer, and
said first conductive type impurity layer being formed in a boundary region including a boundary of said substrate and said
epitaxial layer, a part of said substrate facing the boundary and a part of said first conductive type epitaxial layer facing
the boundary having a second impurity with a second concentration higher than that of the first impurity concentration;
forming in said epitaxial layer a second conductive type region capable of storing in said epitaxial layer a charge generated
by a photoelectric conversion;
forming an interconnection layer on said epitaxial layer; and
removing said substrate.
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