| US 7,452,740 B2 | ||
| Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof | ||
| Koji Kamei, Ichihara (Japan) | ||
| Assigned to Showa Denko K.K., Tokyo (Japan) | ||
| Appl. No. 10/581,751 PCT Filed Dec. 08, 2004, PCT No. PCT/JP2004/018689 § 371(c)(1), (2), (4) Date Jun. 06, 2006, PCT Pub. No. WO2005/057642, PCT Pub. Date Jun. 23, 2005. |
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| Claims priority of provisional application 60/529751, filed on Dec. 17, 2003. | ||
| Claims priority of application No. 2003-412236 (JP), filed on Dec. 10, 2003. | ||
| Prior Publication US 2007/0108458 A1, May 17, 2007 | ||
| Int. Cl. H01L 21/00 (2006.01); H01L 21/44 (2006.01) | ||
| U.S. Cl. 438—46 [438/676; 438/29; 257/E21.053] | 1 Claim |
| 1. A method for manufacturing a gallium nitride-based compound semiconductor light-emitting device comprising
(a) forming an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium
nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor on
a substrate in this order,
(b) providing a positive electrode and a negative electrode, which comprises a bonding pad layer and a contact metal layer,
on the p-type semiconductor layer and the n-type semiconductor layer, respectively;
wherein the contact metal layer is forming through sputtering Cr or a Cr alloy on the n-type semiconductor layer to attain
Ohmic contact without performing annealing.
|