| US 7,452,660 B1 | ||
| Method for resist strip in presence of low K dielectric material and apparatus for performing the same | ||
| Zhisong Huang, Fremont, Calif. (US); and Reza Sadjadi, Saratoga, Calif. (US) | ||
| Assigned to Lam Research Corporation, Fremont, Calif. (US) | ||
| Filed on Aug. 11, 2004, as Appl. No. 10/916,685. | ||
| This patent is subject to a terminal disclaimer. | ||
| Int. Cl. G03F 7/00 (2006.01); B44C 1/22 (2006.01) | ||
| U.S. Cl. 430—329 [430/330; 216/67; 216/69; 510/176; 438/708; 438/710] | 13 Claims |
| 1. A method for removing photoresist material from a substrate, comprising:
providing a substrate having a photoresist material overlying a low k dielectric material, the low k dielectric material having
an exposed portion;
maintaining a temperature of the substrate at less than about 20° C.;
disposing an H2O vapor over the substrate; and
transforming the H2O vapor into a reactive form, wherein the reactive form affects a removal of the photoresist material from the substrate without
causing substantial removal of the low k dielectric material at the exposed portion.
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