CPC H10N 50/01 (2023.02) [H01F 10/3254 (2013.01); H01F 41/34 (2013.01); H10N 50/80 (2023.02); G11C 11/161 (2013.01); H10B 61/00 (2023.02)] | 20 Claims |
1. A method comprising:
forming a stack of magnetic tunneling junction (MTJ) layers over a first electrode;
forming a second electrode on the stack of MTJ layers;
removing a first portion of the stack of MTJ layers to form a patterned first portion while using the first electrode as a mask, wherein a second portion of the stack of MTJ layers covers a top surface of the first electrode after the removing of the first portion of the stack of MTJ layers;
forming a spacer on a sidewall of the patterned first portion of the stack of MTJ layers; and
removing a first portion of the spacer to expose a sidewall surface of the second electrode.
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