US 11,818,904 B2
Image sensor and method for fabricating the same
Min Jun Choi, Hwaseong-si (KR); Kwan Sik Kim, Seoul (KR); Chang Hwa Kim, Hwaseong-si (KR); Sang Su Park, Seoul (KR); and Man Geun Cho, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 12, 2021, as Appl. No. 17/373,103.
Application 17/373,103 is a continuation of application No. 16/391,616, filed on Apr. 23, 2019, granted, now 11,063,090, issued on Jul. 13, 2021.
Claims priority of application No. 10-2018-0094843 (KR), filed on Aug. 14, 2018.
Prior Publication US 2021/0343790 A1, Nov. 4, 2021
Int. Cl. H10K 39/32 (2023.01); H01L 49/02 (2006.01); H04N 25/75 (2023.01); H01L 27/146 (2006.01)
CPC H10K 39/32 (2023.02) [H01L 28/40 (2013.01); H04N 25/75 (2023.01); H01L 27/1463 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14636 (2013.01); H01L 27/14643 (2013.01); H01L 27/14689 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a substrate including a first surface and a second surface, the second surface being opposite the first surface and configured to be light incident;
a photoelectric conversion layer in the substrate,
a wiring structure on the first surface of the substrate, the wiring structure including a plurality of wiring layers;
an interlayer insulating film on the second surface of the substrate;
a capacitor structure in the interlayer insulating film, the capacitor structure including a first conductive pattern, a dielectric pattern, and a second conductive pattern sequentially stacked on the second surface of the substrate;
a first wiring on the interlayer insulating film, the first wiring being connected to one of the first conductive pattern and the second conductive pattern; and
a first penetration via penetrating the substrate and extending from the first surface to the second surface, the first penetration via being connected to the first wiring.