CPC H10B 51/20 (2023.02) [H01L 29/6684 (2013.01); H01L 29/66833 (2013.01); H01L 29/78391 (2014.09); H01L 29/792 (2013.01)] | 20 Claims |
1. A semiconductor device comprising;
a substrate;
a ferroelectric layer disposed on the substrate;
a charge trap layer disposed on the ferroelectric layer;
a gate insulation layer disposed on the charge trap layer; and
a gate electrode layer disposed on the gate insulation layer,
wherein the charge trap layer includes a metal-organic framework layer and metal particles embedded in the metal-organic framework layer.
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