US 11,818,895 B2
Semiconductor device including ferroelectric layer and metal particles embedded in metal-organic framework layer
Won Tae Koo, Icheon-si (KR); and Jae Gil Lee, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jan. 21, 2022, as Appl. No. 17/581,575.
Claims priority of application No. 10-2021-0116639 (KR), filed on Sep. 1, 2021.
Prior Publication US 2023/0064803 A1, Mar. 2, 2023
Int. Cl. H01L 21/00 (2006.01); H10B 51/20 (2023.01); H01L 29/78 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01)
CPC H10B 51/20 (2023.02) [H01L 29/6684 (2013.01); H01L 29/66833 (2013.01); H01L 29/78391 (2014.09); H01L 29/792 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising;
a substrate;
a ferroelectric layer disposed on the substrate;
a charge trap layer disposed on the ferroelectric layer;
a gate insulation layer disposed on the charge trap layer; and
a gate electrode layer disposed on the gate insulation layer,
wherein the charge trap layer includes a metal-organic framework layer and metal particles embedded in the metal-organic framework layer.