CPC H10B 20/367 (2023.02) [G11C 16/0466 (2013.01); H01L 23/57 (2013.01)] | 20 Claims |
1. A memory comprising:
memory cells of a first type disposed over a first semiconductor layer of a substrate, the first type being an embedded Select in Trench Memory (eSTM) type memory cell, one of the eSTM type memory cells comprising a select transistor, the select transistor comprising a vertical trench extending to a second semiconductor layer below the first semiconductor layer; and
memory cells of a second type disposed over the first semiconductor layer, each of the memory cells of the second type comprising only one or more transistors, the first type of memory cell being a different type of memory cell than the second type of memory cell.
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