US 11,818,879 B2
Semiconductor device and method of fabricating the same
Cheonbae Kim, Hwaseong-si (KR); Seungjin Kim, Hwaseong-si (KR); and Dongkyun Lee, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 1, 2022, as Appl. No. 17/901,210.
Application 17/901,210 is a division of application No. 17/320,711, filed on May 14, 2021, granted, now 11,462,543.
Claims priority of application No. 10-2020-0131281 (KR), filed on Oct. 12, 2020.
Prior Publication US 2023/0005917 A1, Jan. 5, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/108 (2006.01); H01L 49/02 (2006.01); H01L 29/78 (2006.01); H10B 12/00 (2023.01)
CPC H10B 12/30 (2023.02) [H01L 28/60 (2013.01); H01L 29/7802 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, the method comprising:
forming contact plugs on a semiconductor substrate;
forming a mold layer and a support forming layer on the contact plugs;
forming a plurality of open areas which expose the contact plugs, by etching the mold layer and the support forming layer;
forming a plurality of lower electrodes along internal walls of the plurality of open areas; and
forming a support which contacts the plurality of lower electrodes, by etching the support forming layer to define the plurality of open areas through an extreme ultraviolet (EUV) process of reflecting EUV light from an EUV photomask,
wherein a center point of each of the plurality of open areas is at a center point of a triangle formed by center points of three corresponding neighboring lower electrodes among the plurality of lower electrodes.