US 11,818,478 B2
Image pixels with coupled-gates structures
Manuel H. Innocent, Wezemaal (BE); Robert Michael Guidash, Fairport, NY (US); and Tomas Geurts, Haasrode (BE)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Mar. 31, 2022, as Appl. No. 17/657,489.
Application 17/657,489 is a continuation of application No. 17/178,416, filed on Feb. 18, 2021, granted, now 11,323,644.
Prior Publication US 2022/0264038 A1, Aug. 18, 2022
Int. Cl. H04N 25/621 (2023.01); H04N 25/75 (2023.01)
CPC H04N 25/623 (2023.01) [H04N 25/75 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor pixel comprising:
a photosensitive element;
a floating diffusion region;
a first transistor that couples the photosensitive element to the floating diffusion region;
a charge storage structure; and
a second transistor that couples the photosensitive element to the charge storage structure, wherein the first and second transistors are configured to form a conductive path between the floating diffusion region and the charge storage structure, wherein the charge storage structure has a terminal directly coupled to only one transistor, and wherein the only one transistor is the second transistor.