CPC H04N 25/623 (2023.01) [H04N 25/75 (2023.01)] | 20 Claims |
1. An image sensor pixel comprising:
a photosensitive element;
a floating diffusion region;
a first transistor that couples the photosensitive element to the floating diffusion region;
a charge storage structure; and
a second transistor that couples the photosensitive element to the charge storage structure, wherein the first and second transistors are configured to form a conductive path between the floating diffusion region and the charge storage structure, wherein the charge storage structure has a terminal directly coupled to only one transistor, and wherein the only one transistor is the second transistor.
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