US 11,817,895 B2
Methods related to radio-frequency filters on silicon-on-insulator substrate
James Phillip Young, Cedar Rapids, IA (US)
Assigned to Skyworks Solutions, Inc., Irvine, CA (US)
Filed by SKYWORKS SOLUTIONS, INC., Irvine, CA (US)
Filed on Feb. 7, 2022, as Appl. No. 17/666,446.
Application 17/666,446 is a continuation of application No. 16/819,142, filed on Mar. 15, 2020, granted, now 11,245,433.
Application 16/819,142 is a continuation of application No. 15/192,812, filed on Jun. 24, 2016, granted, now 10,594,355, issued on Mar. 17, 2020.
Claims priority of provisional application 62/187,174, filed on Jun. 30, 2015.
Prior Publication US 2022/0255577 A1, Aug. 11, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H04B 1/40 (2015.01); H01L 23/498 (2006.01); H01L 23/66 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01)
CPC H04B 1/40 (2013.01) [H01L 23/49827 (2013.01); H01L 23/66 (2013.01); H01L 24/92 (2013.01); H01L 25/0655 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/17 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6655 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/131 (2013.01); H01L 2224/133 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/1329 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/92222 (2013.01); H01L 2924/15311 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a radio-frequency device, comprising:
providing a semiconductor die including a radio-frequency circuit, a first side and a second side, and a plurality of vias, each via configured to provide an electrical connection between the first side and the second side of the semiconductor die; and
mounting a filter device on the first side of the semiconductor die, the filter device in communication with the radio-frequency circuit, the radio-frequency circuit implemented in a layer on the first side of the semiconductor die and at least some of the vias coupled with the radio-frequency circuit to support an electrical connection between the radio-frequency circuit and mounting features on the second side of the semiconductor die.