US 11,817,849 B2
Method and device for adjusting the switching speed of a MOSFET
Bowen Zhong, Suzhou (CN); Daqian Zhang, Suzhou (CN); and Lining Sun, Suzhou (CN)
Assigned to SOOCHOW UNIVERSITY, Suzhou (CN)
Appl. No. 17/441,002
Filed by SOOCHOW UNIVERSITY, Suzhou (CN)
PCT Filed Aug. 11, 2020, PCT No. PCT/CN2020/108355
§ 371(c)(1), (2) Date Sep. 20, 2021,
PCT Pub. No. WO2021/139152, PCT Pub. Date Jul. 15, 2021.
Claims priority of application No. 202010017783.X (CN), filed on Jan. 8, 2020.
Prior Publication US 2022/0166420 A1, May 26, 2022
Int. Cl. H03K 17/041 (2006.01)
CPC H03K 17/04106 (2013.01) 8 Claims
OG exemplary drawing
 
1. A method of adjusting the switching speed of a MOSFET, the method comprising
controlling the switching speed of the MOSFET via a drive switch, a gate resistor, an emitter resistor, and a source resistor, wherein a collector of said drive switch is connected to a gate of said MOSFET through the gate resistor, an emitter of said drive switch is grounded through the emitter resistor, the collector of said drive switch is connected to a first end of the source resistor through the collector resistor, the other end of said source resistor is connected to the source of said MOSFET, the drain of said MOSFET is connected to a current source;
adjusting the switching speed of said MOSFET to an adjustment target by adjusting a first resistance value of said emitter resistor and/or a second resistance value of said collector resistor based on said adjustment target,
wherein adjusting the first resistance value of said emitter resistor and/or the second resistance value of said collector resistor based on said adjustment target comprises:
a, adjusting the turn-on speed by altering the first resistance value of said emitter resistor, and/or
b, adjusting the turn-off speed by altering the second resistance value of said collector resistor.