CPC H03F 3/213 (2013.01) [H03F 1/565 (2013.01); H04B 1/3827 (2013.01); H04B 1/40 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01)] | 20 Claims |
1. A power amplifier system comprising:
a semiconductor-on-insulator die;
a power amplifier implemented on the semiconductor-on-insulator die and configured to amplify a radio frequency input signal having a fundamental frequency, the power amplifier including an input configured to receive the radio frequency input signal and an output configured to provide an amplified radio frequency signal; and
an output matching circuit implemented on the semiconductor-on-insulator die and including first, second, and third second-order harmonic rejection circuits configured to resonate at about two times the fundamental frequency, and including a third order harmonic rejection circuit configured to resonate at about three times the fundamental frequency, the first and second second-order harmonic rejection circuits being harmonic short circuits and the third second-order harmonic rejection circuit and the third-order harmonic rejection circuit being harmonic open circuits, the first second-order harmonic rejection circuit positioned between the output of the power amplifier and a power low supply voltage, the third-order harmonic rejection circuit positioned between the output of the power amplifier and a first node, the third second-order harmonic circuit positioned between the first node and a second node, and the second second-order harmonic circuit positioned between the second node and the power low supply voltage.
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