US 11,817,784 B2
Switching slew rate control for gate drivers
Karel Ptacek, Roznov Pod Radhostem (CZ); Roman Stuler, Karolinka (CZ); and Roman Radvan, Roznov pod Radhostem (CZ)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Jan. 11, 2022, as Appl. No. 17/647,631.
Prior Publication US 2023/0223850 A1, Jul. 13, 2023
Int. Cl. H02M 1/08 (2006.01); H02M 3/158 (2006.01); H02M 1/00 (2006.01); H03K 17/16 (2006.01)
CPC H02M 3/158 (2013.01) [H02M 1/0009 (2021.05); H02M 1/0025 (2021.05); H02M 1/0029 (2021.05); H02M 1/08 (2013.01); H03K 17/162 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for operating a switching circuit including a switching transistor coupled to a load, the method comprising:
applying, with a driver, a gate voltage to the switching transistor;
generating, with a feedback capacitor, a feedback current based on a change in a voltage sensed at a drain terminal of the switching transistor when the switching transistor turns on;
applying the feedback current to the driver to limit the gate voltage applied to the switching transistor; and
adjusting, with a controller, a switching slew rate of the switching transistor by draining an amount of the feedback current.